BUP50A Просмотр технического описания (PDF) - Semelab - > TT Electronics plc

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BUP50A

NPN MULTI-EPITAXIAL VERY FAST SWITCHING HIGH POWER TRANSISTOR

Semelab - > TT Electronics plc  

BUP50A

ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)

Parameter

Test Conditions

Min.

ICEX

Collector Cut–Off Current

VBE = -1.5V VCEX = 154

TC = 150°C

IEBO

Emitter Cut–Off Current

VEB = 8V

Collector – Emitter Saturation

VCE(sat)* Voltage

IC = 25A

IC = 40A

IC = 100A

IB = 2A

IB = 3A

IB = 10A

IC = 25A

IB = 2A

VBE(sat) Base – Emitter Saturation Voltage IC = 40A

IB = 3A

IC = 100A IB = 10A

IC = 25A

VCE = 4V

25

hFE

DC Current Gain

IC = 40A

VCE = 4V

20

IC = 100A VCE = 4V

10

SWITCHING CHARACTERISTICS (Tcase = 25°C unless otherwise stated)

ton

On Time

ts

Storage Time

tf

Fall Time

IC = 80A

VCC = 80V

IB1 = -IB2 = 8A

* Pulse test tp = 300µS δ ≤ 2%

Typ.

0.4

0.5

0.7

0.9

1.0

1.3

55

30

157

0.4

0.3

0.1

Max.

0.1

5

0.1

0.35

0.5

1

1

1.2

1.5

Unit

mA

mA

V

V

—

0.8

0.5 µS

0.2

Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.

E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk

Prelim. 6/99

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