BULD25D, BULD25DR, BULD25SL
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
JULY 1994 - REVISED SEPTEMBER 1997
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION JUNCTION TO AMBIENT
vs
POWER PULSE DURATION
100
LDX25DPA
0%
BULD25D
TA = 25°C
10 10%
20%
40%
60%
1·0
0·1
10-4
10-3
10-2
10-1
100
101
102
103
t1 - Power Pulse Duration - s
Figure 10.
MAXIMUM POWER DISSIPATION JUNCTION TO AMBIENT
vs
POWER PULSE DURATION
100
LDX25SPA
0%
BULD25SL
TA = 25°C
10%
10
20%
40%
60%
1·0
10-4
10-3
10-2
10-1
100
101
102
103
t1 - Power Pulse Duration - s
Figure 11.
PRODUCT INFORMATION
6