BULD25 Просмотр технического описания (PDF) - Power Innovations Ltd
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BULD25 Datasheet PDF : 12 Pages
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BULD25D, BULD25DR, BULD25SL
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
JULY 1994 - REVISED SEPTEMBER 1997
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
LDX25DFB
10
BULD25D
TA = 25°C
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
LDX25SFB
10
BULD25SL
TA = 25°C
1·0
1·0
0·1
tp = 100 µs
tp = 10 ms
tp = 1 s
0·01
1·0
10
100
VCE - Collector-Emitter Voltage - V
Figure 4.
1000
0·1
tp = 100 µs
tp = 10 ms
tp = 1 s
0·01
1·0
10
100
VCE - Collector-Emitter Voltage - V
Figure 5.
1000
MAXIMUM REVERSE-BIAS
SAFE OPERATING AREA
5
LDX25DRB
BULD25D
IB(on) = IC / 5
4
VBE(off) = -5 V
TA = 25°C
3
2
1
0
0 100 200 300 400 500 600 700 800
VCE - Collector-Emitter Voltage - V
Figure 6.
PRODUCT INFORMATION
4
MAXIMUM REVERSE-BIAS
SAFE OPERATING AREA
5
LDX25SRB
BULD25SL
IB(on) = IC / 5
4
VBE(off) = -5 V
TA = 25°C
3
2
1
0
0 100 200 300 400 500 600 700 800
VCE - Collector-Emitter Voltage - V
Figure 7.
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