BULD25 Просмотр технического описания (PDF) - Power Innovations Ltd
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BULD25 Datasheet PDF : 12 Pages
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BULD25D, BULD25DR, BULD25SL
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
JULY 1994 - REVISED SEPTEMBER 1997
TYPICAL CHARACTERISTICS
FORWARD CURRENT TRANSFER RATIO
vs
COLLECTOR CURRENT
30
LDX25SHF
TA = 25°C
ANTI-PARALLEL DIODE
INSTANTANEOUS FORWARD CURRENT
vs
INSTANTANEOUS FORWARD VOLTAGE
LDX25DVF
10
TA = 25°C
10
1·0
VCE = 1.5 V
VCE = 5 V
VCE = 10 V
1·0
0·01
0·1
1·0
IC - Collector Current - A
Figure 1.
0·1
0·01
10
0
0·5
1·0
1·5
2·0
2·5
3·0
VEC - Instantaneous Forward Voltage - V
Figure 2.
BASE-EMITTER SATURATION VOLTAGE
vs
AMBIENT TEMPERATURE
1.0
LDX25SVB
IC = 0.5 A
IB = 0.1 A
0.9
0.8
0.7
0.6
-50
-25 0 25 50 75 100 125 150
TA - Ambient Temperature - °C
Figure 3.
PRODUCT INFORMATION
3
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