BULD25 Просмотр технического описания (PDF) - Power Innovations Ltd
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BULD25 Datasheet PDF : 12 Pages
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BULD25D, BULD25DR, BULD25SL
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
JULY 1994 - REVISED SEPTEMBER 1997
absolute maximum ratings at 25°C ambient temperature (unless otherwise noted) (continued)
RATING
Continuous collector current (see Note 1)
Peak collector current (see Note 2)
Continuous base current (see Note 1)
Peak base current (see Note 2)
Continuous device dissipation at (or below) 25°C ambient temperature
BULD25D
BULD25SL
Maximum average continuous diode forward current at (or below) 25°C ambient temperature
Operating junction temperature range
Storage temperature range
NOTES: 1. This value applies for tp = 1 s.
2. This value applies for tp = 10 ms, duty cycle ≤ 2%.
SYMBOL
IC
ICM
IB
IBM
Ptot
IE(av)
Tj
Tstg
VALUE
2
4
1.5
2.5
see Figure 10
see Figure 11
0.5
-65 to +150
-65 to +150
UNIT
A
A
A
A
W
A
°C
°C
electrical characteristics at 25°C ambient temperature
PARAMETER
VCEO(sus)
ICES
IEBO
VBE(sat)
VCE(sat)
Collector-emitter
sustaining voltage
Collector-emitter
cut-off current
Emitter cut-off
current
Base-emitter
saturation voltage
Collector-emitter
saturation voltage
Forward current
hFE
transfer ratio
Anti-parallel diode
VEC
forward voltage
IC = 0.1 A
VCE = 600 V
VEB = 9 V
IB = 0.1 A
IB = 0.1 A
IB = 0.2 A
VCE = 10 V
VCE = 1.5 V
VCE = 5 V
IE = 1 A
TEST CONDITIONS
MIN TYP MAX UNIT
400
V
VBE = 0
IC = 0
IC = 0.5 A
IC = 0.5 A
IC = 1 A
IC = 0.01 A
IC = 0.5 A
IC = 1 A
10
µA
1
mA
(see Notes 3 and 4)
0.9 1.1
V
(see Notes 3 and 4)
0.3 0.5
V
0.6
1
10
18
(see Notes 3 and 4) 10
15
20
10
15
20
(see Notes 3 and 4)
1.5 1.7
V
NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts, and located
within 1 mm from the device body for the D package and 3.2 mm from the device body for the SL package.
thermal characteristics
PARAMETER
RθJA Junction to free air thermal resistance
D package
SL Package
MIN TYP MAX UNIT
165
°C/W
115
switching characteristics at 25°C ambient temperature
PARAMETER
TEST CONDITIONS
Anti-parallel diode
Measured by holding transistor
trr
reverse recovery time in an off condition, VEB = -3 V
ts
Storage time
(see Note 5)
tf
Fall time
(see Note 5)
(see Note 5)
NOTE 5: Refer to Figures 12, 13 and 14 for Functional Test Circuit and Switching Waveforms.
MIN TYP MAX UNIT
0.5
1
µs
2
3.5
5
µs
0.25 0.35 µs
PRODUCT INFORMATION
2
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