BULD25DR Просмотр технического описания (PDF) - Power Innovations Ltd

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производитель

BULD25DR

NPN SILICON TRANSISTOR WITH INTEGRATED DIODE

Power Innovations Ltd 

BULD25D, BULD25DR, BULD25SL

NPN SILICON TRANSISTOR WITH INTEGRATED DIODE

JULY 1994 - REVISED SEPTEMBER 1997

MECHANICAL DATA

SL003

3-pin plastic single-in-line package

This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic

compound. The compound will withstand soldering temperature with no deformation, and circuit performance

characteristics will remain stable when operated in high humidity conditions. Leads require no additional

cleaning or processing when used in soldered assembly.

SL003

10,2 (0.400) MAX

4,57 (0.180)

MAX

Index

Dot

8,31 (0.327)

MAX

12,9 (0.492)

MAX

1

2

1,854 (0.073) MAX

0,711 (0.028)

0,559 (0.022)

3 Places

4,267 (0.168)

MIN

3

Pin Spacing

2,54 (0.100) T.P.

(see Note A)

2 Places

6,60 (0.260)

6,10 (0.240)

0,356 (0.014)

0,203 (0.008)

3 Places

ALL LINEAR DIMENSIONS ARE IN MILLIMETERS AND PARENTHETICALLY IN INCHES

NOTES: A. Each pin centerline is located within 0,25 (0.010) of its true longitudinal position.

B. Body molding flash of up to 0,15 (0.006) may occur in the package lead plane.

PRODUCT INFORMATION

10

MDXXAD

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