BUK9605-30A Просмотр технического описания (PDF) - NXP Semiconductors.
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BUK9605-30A Datasheet PDF : 13 Pages
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Nexperia
BUK9605-30A
N-channel TrenchMOS logic level FET
400
ID 10.0
(A) 7.0
300 6.0
200
VGS (V) = 4.4
5.0
4.8
4.6
100
0
0
2
4
6
003aag055
4.2
4.0
3.8
3.6
3.4
3.2
3.0
2.8
2.6
2.4
8
10
VDS (V)
Tj = 25 °C
Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
11
RDS(on)
(mΩ)
9
7
5
VGS (V) =
3.0
3.2
3.4
3.6
4.0
5.0
003aag056
3
0
20
40
60
80
100
ID (A)
Tj = 25 °C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values
6.5
RDS(on)
(mΩ) 6.0
003aag057
5.5
5.0
4.5
4.0
3.5
3.0
3
4
5
6
7
8
9 10
VGS (V)
Tj = 25 °C; ID = 25 A
Fig 8. Drain-source on-state resistance as a function
of gate-source voltage; typical values
100
ID
(A)
80
003aag058
60
40
Tj = 175 °C
Tj = 25 °C
20
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VGS (V)
VDS > ID x RDSon
Fig 9. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
BUK9605-30A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 19 April 2011
© Nexperia B.V. 2017. All rights reserved
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