BU941 Просмотр технического описания (PDF) - Quanzhou Jinmei Electronic
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производитель
BU941 Datasheet PDF : 3 Pages
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Product Specification
Silicon NPN Power Transistor
DESCRIPTION
·High Voltage
·DARLINGTON
APPLICATIONS
·High ruggedness electronic ignitions
·High voltage ignition coil driver
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
500
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current- Continuous
ICM
Collector Current-Peak
IB
Base Current
15
A
30
A
1
A
IBM
Base Current-Peak
Collector Power Dissipation
PC
@TC=25℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
5
A
180
W
200
℃
-65~200
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case 0.97 ℃/W
www.jmnic.com
BU941
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