BTS650PE3180A Просмотр технического описания (PDF) - Siemens AG

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BTS650PE3180A

Smart Highside High Current Power Switch

Siemens AG 

Inverse Load Current Operation

On-state resistance (Pins 1,2,6,7 to pin 4)

VbIN = 12 V, IL = - 20 A

Tj = 25 °C:

see diagram on page 10

Tj = 150 °C:

Nominal inverse load current (Pins 1,2,6,7 to Tab)

VON = -0.5 V, Tc = 85 °C11

Drain-source diode voltage (Vout > Vbb)

IL = - 20 A, IIN = 0, Tj = +150°C

RON(inv)

IL(inv)

-VON

Operating Parameters

Operating voltage (VIN = 0) 9, 13)

Undervoltage shutdown 14)

Undervoltage start of charge pump

see diagram page 15

Overvoltage protection15)

Ibb = 15 mA

Tj =-40°C:

Tj = 25...+150°C:

Standby current

IIN = 0

Tj =-40...+25°C:

Tj = 150°C:

Vbb(on)

VbIN(u)

VbIN(ucp)

VbIN(Z)

Ibb(off)

BTS650P

-- 4.4 6.0 mΩ

7.9 10.5

55 70

-- A

-- 0.6

-- V

5.0

-- 34 V

1.5 3.0 4.5 V

3.0 4.5 6.0 V

60

--

-- V

62 66

--

-- 15 25 µA

-- 25 50

)13 If the device is turned on before a Vbb-decrease, the operating voltage range is extended down to VbIN(u).

For all voltages 0 ... 34 V the device is fully protected against overtemperature and short circuit.

)14 VbIN = Vbb - VIN see diagram on page 7. When VbIN increases from less than VbIN(u) up to VbIN(ucp) = 5 V

(typ.) the charge pump is not active and VOUT ≈Vbb - 3 V.

15) See also VON(CL) in circuit diagram on page 9.

Semiconductor Group

Page 4

1998-Nov.-2

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