BTS650PE3180A Просмотр технического описания (PDF) - Siemens AG
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BTS650PE3180A Datasheet PDF : 16 Pages
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Thermal Characteristics
Parameter and Conditions
Symbol
Thermal resistance
chip - case: RthJC7)
junction - ambient (free air): RthJA
SMD version, device on PCB8):
Electrical Characteristics
Parameter and Conditions
at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified
Symbol
BTS650P
Values
min typ max
--
-- 0.75
-- 60
--
33
Unit
K/W
Values
Unit
min typ max
Load Switching Capabilities and Characteristics
On-state resistance (Tab to pins 1,2,6,7, see
measurement circuit page 7)
IL = 20 A, Tj = 25 °C: RON
VIN = 0, IL = 20 A, Tj = 150 °C:
IL = 90 A, Tj = 150 °C:
Vbb = 6V9), IL = 20 A, Tj = 150 °C:
Nominal load current10) (Tab to pins 1,2,6,7)
ISO 10483-1/6.7: VON = 0.5 V, Tc = 85 °C 11)
Nominal load current10), device on PCB8))
TA = 85 °C, Tj ≤ 150 °C VON ≤ 0.5 V,
Maximum load current in resistive range
(Tab to pins 1,2,6,7)
VON = 1.8 V, Tc = 25 °C:
see diagram on page 13 VON = 1.8 V, Tc = 150 °C:
Turn-on time12)
IIN
Turn-off time
IIN
RL = 1 Ω , Tj =-40...+150°C
to 90% VOUT:
to 10% VOUT:
Slew rate on 12) (10 to 30% VOUT )
RL = 1 Ω , TJ = 25 °C
Slew rate off 12) (70 to 40% VOUT )
RL = 1 Ω , TJ = 25 °C
RON(Static)
IL(ISO)
IL(NOM)
IL(Max)
ton
toff
dV/dton
-dV/dtoff
--
--
55
13.6
250
150
100
30
--
--
4.4 6.0 mΩ
7.9 10.5
-- 10.7
10 17
70
-- A
17
-- A
--
--
--
-- A
-- 420 µs
-- 110
0.7
-- V/µs
1.1
-- V/µs
7) Thermal resistance RthCH case to heatsink (about 0.5 ... 0.9 K/W with silicone paste) not included!
8) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air.
9) Decrease of Vbb below 10 V causes slowly a dynamic increase of RON to a higher value of RON(Static). As
long as VbIN > VbIN(u) max, RON increase is less than 10 % per second for TJ < 85 °C.
10) Not tested, specified by design.
11) TJ is about 105°C under these conditions.
)12 See timing diagram on page 14.
Semiconductor Group
Page 3
1998-Nov.-2
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