BTA201 Просмотр технического описания (PDF) - NXP Semiconductors.
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BTA201 Datasheet PDF : 12 Pages
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NXP Semiconductors
BTA201 series B, E and ER
1 A Three-quadrant triacs high commutation
6. Static characteristics
Table 5. Static characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
BTA201-600B
BTA201-800B
BTA201-600E Unit
BTA201-800E
BTA201-800ER
Min Typ Max Min Typ Max
IGT
gate trigger current VD = 12 V; IT = 0.1 A; see Figure 8
T2+ G+
5
-
50 1
-
10 mA
T2+ G−
5
-
50 1
-
10 mA
T2− G−
5
-
50 1
-
10 mA
IL
latching current
VD = 12 V; IGT = 0.1 A; see Figure 10
T2+ G+
-
-
30 -
-
12 mA
T2+ G−
-
-
50 -
-
20 mA
T2− G−
-
-
30 -
-
12 mA
IH
holding current
VD = 12 V; IGT = 0.1 A; see Figure 11 -
-
30 -
-
12 mA
VT
on-state voltage
IT = 1.4 A; see Figure 9
-
1.2 1.5 -
1.2 1.5 V
VGT
gate trigger voltage VD = 12 V; IT = 0.1 A; see Figure 7 -
0.7 1.5 -
0.7 1.5 V
VD = 400 V; IT = 0.1 A; Tj = 125 °C 0.2 0.3 -
0.2 0.3 -
V
ID
off-state current
VD = VDRM(max); Tj = 125 °C
-
0.1 0.5 -
0.1 0.5 mA
BTA201_SER_B_E_ER_4
Product data sheet
Rev. 04 — 4 February 2008
© NXP B.V. 2008. All rights reserved.
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