BTA201 Просмотр технического описания (PDF) - NXP Semiconductors.
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BTA201 Datasheet PDF : 12 Pages
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NXP Semiconductors
BTA201 series B, E and ER
1 A Three-quadrant triacs high commutation
3. Ordering information
Table 2. Ordering information
Type number Package
Name
Description
BTA201-600B TO-92
plastic single-ended leaded (through hole) package; 3 leads
BTA201-600E
BTA201-800B
BTA201-800E
BTA201-800ER
4. Limiting values
Version
SOT54
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDRM
repetitive peak off-state voltage
BTA201-600B
BTA201-600E
BTA201-800B
BTA201-800E
BTA201-800ER
IT(RMS)
RMS on-state current
full sine wave; Tlead ≤ 54.3 °C; see
Figure 4 and 5
ITSM
non-repetitive peak on-state current full sine wave; Tj = 25 °C prior to
surge; see Figure 2 and 3
t = 20 ms
t = 16.7 ms
I2t
dIT/dt
IGM
PGM
PG(AV)
Tstg
Tj
I2t for fusing
rate of rise of on-state current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
tp = 10 ms
ITM = 1.5 A; IG = 0.2 A;
dIG/dt = 0.2 A/µs
over any 20 ms period
Min
[1] -
[1] -
-
-
-
-
-
-
-
-
-
-
-
−40
-
Max Unit
600
V
600
V
800
V
800
V
800
V
1
A
12.5 A
13.7 A
0.78
A2s
100
A/µs
2
A
5
W
0.1
W
+150 °C
125
°C
[1] Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The
rate of rise of current should not exceed 6 A/µs.
BTA201_SER_B_E_ER_4
Product data sheet
Rev. 04 — 4 February 2008
© NXP B.V. 2008. All rights reserved.
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