BT137-600 Просмотр технического описания (PDF) - SemiWell Semiconductor
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BT137-600 Datasheet PDF : 5 Pages
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BT137-600
Electrical Characteristics
Symbol
Items
IDRM
VTM
I+GT1
I
-
GT1
I
-
GT3
V+GT1
V-GT1
V-GT3
VGD
(dv/dt)c
IH
Rth(j-c)
Repetitive Peak Off-State
Current
Peak On-State Voltage
Ⅰ
Ⅱ Gate Trigger Current
Ⅲ
Ⅰ
Ⅱ Gate Trigger Voltage
Ⅲ
Non-Trigger Gate Voltage
Critical Rate of Rise Off-State
Voltage at Commutation
Holding Current
Thermal Impedance
Conditions
VD = VDRM, Single Phase, Half Wave
TJ = 125 °C
IT = 10 A, Inst. Measurement
VD = 6 V, RL=10 Ω
VD = 6 V, RL=10 Ω
TJ = 125 °C, VD = 1/2 VDRM
TJ = 125 °C, [di/dt]c = -3.0 A/ms,
VD=2/3 VDRM
Junction to case
Ratings
Unit
Min. Typ. Max.
─
─
1.0
mA
─
─
1.6
V
─
─
25
─
─
25
mA
─
─
25
─
─
1.5
─
─
1.5
V
─
─
1.5
0.2
─
─
V
5.0
─
─ V/㎲
─
10
─
mA
─
─
2.0 °C/W
2/5
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