BSS84LT1 Просмотр технического описания (PDF) - ON Semiconductor
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BSS84LT1 Datasheet PDF : 4 Pages
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BSS84LT1
TYPICAL ELECTRICAL CHARACTERISTICS
9
VGS = 4.5 V
8
7
150°C
6
5
25°C
4
−55°C
3
2
0
0.1
0.2
0.3
0.4
0.5
0.6
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current
7
6.5 VGS = 10 V
150°C
6
5.5
5
4.5
4
25°C
3.5
3
−55°C
2.5
2
0
0.1
0.2
0.3
0.4
0.5
0.6
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
2
8
VDS = 40 V
1.8
VGS = 10 V
7 TJ = 25°C
ID = 0.52 A
1.6
6
1.4
5
1.2
VGS = 4.5 V
ID = 0.13 A
4
3
ID = 0.5 A
1
2
0.8
1
0.6
−55
−5
45
95
TJ, JUNCTION TEMPERATURE (°C)
0
145
0
500
1000
1500
2000
QT, TOTAL GATE CHARGE (pC)
Figure 5. On−Resistance Variation with Temperature
Figure 6. Gate Charge
1
0.1
TJ = 150°C
25°C
−55°C
0.01
0.001
0
0.5
1.0
1.5
2.0
2.5
3.0
VSD, DIODE FORWARD VOLTAGE (VOLTS)
Figure 7. Body Diode Forward Voltage
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