BSS84 Просмотр технического описания (PDF) - Weitron Technology
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BSS84 Datasheet PDF : 4 Pages
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BSS84
Electrical Characteristics (TA=25 C Unless otherwise noted)
Characteristic
Symbol
Min
Typ
S tati c (1)
Drain-Source Breakdown Voltage
VGS=0V, ID=250 uA
Gate-Source Threshold Voltage
VDS=VGS, ID=1.0 mA
Gate-Source Leakage Current
VDS=0V, VGS=-+20V
Zero Gate Voltage Drain Current
VDS=25V, VGS=0V
VDS=50V, VGS=0V
Drain-Source On-Resistance
VGS=5.0V, ID=100mA
Forward Transconductance
VDS=25V, ID=100mA, f=1.0KHZ
V(BR)DSS
50
-
VGS (th)
0.8
-
IGSS
-
-
IDSS
-
-
rDS (on)
-
5.0
gfs
50
-
Dynamic
Input Capacitance
VDS=5V, VGS=0V, f=1MHZ
Output Capacitance
VDS=5V, VGS=0V, f=1MHZ
Reverse Transfer Capacitance
VDS=5V, VGS=0V, f=1MHZ
Ciss
-
30
Coss
-
10
Crss
-
5.0
Switching (2)
Turn-On Time
VDD =-15V, I D=-2.5A, R L=50
Rise Time
VDD =-15V, I D=-2.5A, R L=50
Turn-Off Time
VDD =-15V, I D=-2.5A, R L=50
Fall Time
VDD =-15V, I D=-2.5A, R L=50
Gate Charge
td(on)
-
tr
-
td(off )
-
tf
-
QT
-
25
1.0
16
8.0
6000
Source-Drain Diode Characteristics
Continuous Current
IS
-
-
Pulsed Current
I SM
-
-
Forward Voltage(2)
VSD
-
2.5
Note:
1. Pulse Test : PW 300us, Duty Cycle 2%.
2. Switching Time is Essentially Independent of Operating Temperature.
WEITRON
http://www.weitron.com.tw
Max
Unit
-
V
2.0
V
-+60
uA
0.1
15
uA
10
-
mS
-
-
PF
-
-
nS
-
-
nS
-
-
PC
0.130
A
0.520
-
V
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