BSS138BKW Просмотр технического описания (PDF) - Philips Electronics
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BSS138BKW Datasheet PDF : 16 Pages
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NXP Semiconductors
BSS138BKW
60 V, 320 mA N-channel Trench MOSFET
0.6
ID
(A)
0.4
aaa-000162
(1) (2)
2
a
1.5
aaa-000163
1
0.2
0.5
(2)
(1)
0
0
1.0
2.0
3.0
VGS (V)
VDS > ID x RDSon
(1) Tj = 25 °C
(2) Tj = 150 °C
Fig 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
0
-60
0
60
120
180
Tj = (°C)
Fig 11. Normalized drain-source on-state resistance as
a function of junction temperature; typical
values
2
VGS(th)
(V)
1.5
1
aaa-000164
(1)
102
aaa-000165
(1)
C
(pF)
(2)
10
(3)
(2)
0.5
(3)
0
-60
0
60
120
180
Tj (°C)
ID = 0.25 mA; VDS = VGS
(1) maximum values
(2) typical values
(3) minimum values
Fig 12. Gate-source threshold voltage as a function of
junction temperature
1
10-1
1
10
102
VDS (V)
f = 1 MHz; VGS = 0 V
(1) Ciss
(2) Coss
(3) Crss
Fig 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
BSS138BKW
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 12 August 2011
© NXP B.V. 2011. All rights reserved.
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