BSS138BKW Просмотр технического описания (PDF) - Philips Electronics
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BSS138BKW Datasheet PDF : 16 Pages
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NXP Semiconductors
BSS138BKW
60 V, 320 mA N-channel Trench MOSFET
0.4
10 V
ID
(A)
2.5 V
0.3
0.2
aaa-000158
2V
1.75 V
10-3
ID
(A)
10-4
(1)
(2)
aaa-000159
(3)
10-5
0.1
1.5 V
VGS = 1.25 V
0
0
1
2
3
4
VDS (V)
Tj = 25 °C
Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
10-6
0
0.5
1.0
1.5
2.0
VGS (V)
Tj = 25 °C; VDS = 5 V
(1) minimum values
(2) typical values
(3) maximum values
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
6
RDS(on)
(Ω)
(1)
4
(2)
aaa-000160
6
RDS(on)
(Ω)
4
aaa-000161
(3)
2
(4)
(1)
2
(5)
(2)
(6)
0
0
0.1
0.2
0.3
0.4
ID (A)
Tj = 25 °C
(1) VGS = 1.5 V
(2) VGS = 1.75 V
(3) VGS = 2.0 V
(4) VGS = 2.25 V
(5) VGS = 4.5 V
(6) VGS = 10 V
Fig 8. Drain-source on-state resistance as a function
of drain current; typical values
0
0
2
4
6
8
10
VGS (V)
ID = 300 mA
(1) Tj = 150 °C
(2) Tj = 25 °C
Fig 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
BSS138BKW
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 12 August 2011
© NXP B.V. 2011. All rights reserved.
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