BSS138 Просмотр технического описания (PDF) - PANJIT INTERNATIONAL

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BSS138

50V N-Channel Enhancement Mode MOSFET - ESD Protected

PANJIT INTERNATIONAL 

BSS138

10

ID =250mA

8

6

4

2

0

0 0.2 0.4 0.6 0.8 1 1.2

Qg - Gate Charge (nC)

Fig.6 - Gate Charge Waveform

1.2

ID = 250mA

1.1

1.0

0.9

0.8

0.7

-50 -25 0 25 50 75 100 125 150

TJ - Junction Temperature (OC)

Fig.8 - Threshold Voltage vs Temperature

1

V = GS 0V

TJ = 125OC

0.1

TJ =25OC

TJ =-55OC

0.01

0.2

0.4 0.6 0.8 1 1.2 1.4

VSD - Source-to-Drain Voltage (V)

Fig.7 Source-Drain Diode Forward Voltage

1.2

ID = 250mA

1.15

1.1

1.05

1

0.95

0.9

-50 -25 0 25 50 75 100 125 150

TJ - Junction Temperature (OC)

Fig.9 - Breakdown Voltage vs Junction Temperature

October 26,2010-REV.00

PAGE . 4

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