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BSS138 Просмотр технического описания (PDF) - PANJIT INTERNATIONAL

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BSS138 Datasheet PDF : 5 Pages
1 2 3 4 5
BSS138
ELECTRICAL CHARACTERISTICS
Parameter
S ym b o l
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Drain-Source On-State
Re s i s ta nc e
Drain-Source On-State
Re s i s ta nc e
Drain-Source On-State
Re s i s ta nc e
Zero Gate Voltage Drain
C urrent
Gate Body Leakage
B V DSS
V
GS ( th)
R D S ( o n)
R D S ( o n)
R D S ( o n)
I
DSS
IGS S
Forward Transconductance
g fS
Dynamic
To ta l Ga te C ha r g e
Turn-On Ti me
Tur n- Off Ti me
Input C apaci tance
Output Capacitance
Re ve rse Tra ns fe r
C a p a c i ta nce
Source-Drain Diode
Qg
ton
toff
C iss
C oss
C rss
Te s t C o nd i ti o n
V GS=0 V , ID=1 0 μA
V =V , I =250μA
DS
GS D
VGS=2.5V , I D=100mA
VGS=4.5V , I D=200mA
VGS=10V , I D=500mA
V =50V , V =0V
DS
GS
V GS=+20V , VDS=0V
V DS=1 0 V , ID=2 5 0 mA
V DS=2 5 V, ID=2 5 0 mA
VGS=4.5V
VDD=30V , RL=100Ω
ID=300mA , VGEN=10V
RG=6Ω
VDS=25V , V GS=0V
f=1.0MHZ
Mi n. Typ .
50
-
0.8
-
-
2.8
-
1.8
-
1.6
-
-
-
-
100
-
-
-
-
-
-
-
-
-
-
-
-
-
Diode Forward Voltage
V SD
C ontinuous Diode Forward
C urrent
IS
Pulse Diode Forward
C urrent
ISM
IS=250mA , VGS=0V
-
-
-
0.82
-
-
-
-
Switching
Test Circuit
VIN
VDD
Gate Charge
Test Circuit
RL
VGS
VOUT
Max. Units
-
V
1.5
V
6.0
4.0
Ω
3.0
1
μA
+10
μA
-
mS
1.0
nC
40
ns
150
50
10
pF
5
1.2
V
300
mA
2000
mA
VDD
RL
RG
1mA
RG
October 26,2010-REV.00
PAGE . 2

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