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Компоненты Описание
BSS138 Просмотр технического описания (PDF) - PANJIT INTERNATIONAL
Номер в каталоге
Компоненты Описание
производитель
BSS138
50V N-Channel Enhancement Mode MOSFET - ESD Protected
PANJIT INTERNATIONAL
BSS138 Datasheet PDF : 5 Pages
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BSS138
ELECTRICAL CHARACTERISTICS
Parameter
S ym b o l
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Drain-Source On-State
Re s i s ta nc e
Drain-Source On-State
Re s i s ta nc e
Drain-Source On-State
Re s i s ta nc e
Zero Gate Voltage Drain
C urrent
Gate Body Leakage
B V
DSS
V
GS ( th)
R
D S ( o n)
R
D S ( o n)
R
D S ( o n)
I
DSS
I
GS S
Forward Transconductance
g
fS
Dynamic
To ta l Ga te C ha r g e
Turn-On Ti me
Tur n- Off Ti me
Input C apaci tance
Output Capacitance
Re ve rse Tra ns fe r
C a p a c i ta nce
Source-Drain Diode
Q
g
t
on
t
off
C
iss
C
oss
C
rss
Te s t C o nd i ti o n
V
GS
=0 V , I
D
=1 0
μ
A
V =V , I =250
μ
A
DS
GS D
V
GS
=2.5V , I
D
=100mA
V
GS
=4.5V , I
D
=200mA
V
GS
=10V , I
D
=500mA
V =50V , V =0V
DS
GS
V
GS
=+20V , V
DS
=0V
V
DS
=1 0 V , I
D
=2 5 0 mA
V
DS
=2 5 V, I
D
=2 5 0 mA
V
GS
=4.5V
V
DD
=30V , R
L
=100
Ω
I
D
=300mA , V
GEN
=10V
R
G
=6
Ω
V
DS
=25V , V
GS
=0V
f=1.0MH
Z
Mi n. Typ .
50
-
0.8
-
-
2.8
-
1.8
-
1.6
-
-
-
-
100
-
-
-
-
-
-
-
-
-
-
-
-
-
Diode Forward Voltage
V
SD
C ontinuous Diode Forward
C urrent
I
S
Pulse Diode Forward
C urrent
I
SM
I
S
=250mA , V
GS
=0V
-
-
-
0.82
-
-
-
-
Switching
Test Circuit
V
IN
V
DD
Gate Charge
Test Circuit
R
L
V
GS
V
OUT
Max. Units
-
V
1.5
V
6.0
4.0
Ω
3.0
1
μ
A
+10
μ
A
-
mS
1.0
nC
40
ns
150
50
10
pF
5
1.2
V
300
mA
2000
mA
V
DD
R
L
R
G
1mA
R
G
October 26,2010-REV.00
PAGE . 2
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