BSR56 Просмотр технического описания (PDF) - Fairchild Semiconductor
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BSR56 Datasheet PDF : 3 Pages
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BSR56
N-Channel Low-Frequency Low-Noise
Amplifier
• This device is designed for low-power chopper or switching application
sourced from process 51
3
2
SOT-23
1
Mark: M4
1. Drain 2. Source 3. Gate
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VDGO
VGSO
IGF
Ptot
TSTG
TJ
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Total Power Dissipation up to Tamb=40°C
Storage Temperature Range
Junction Temperature
Value
40
- 40
50
250
- 55 ~ 150
150
Units
V
V
mA
mW
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVGSS
IGSS
IDSS
VGS(off)
VDS(on)
rds(on)
Crss
td
tr
toff
Gate-Source Voltage
Gate Reverse Current
Zero-Gate Voltage Drain Current
Gate-Source Cut-off Voltage
Drain-Source On Voltage
Drain-Source On Reverse
Reverse Transfer Capacitance
Delay Time
Rise Time
Turn-off Time
VDS = 0V, IC = 1µA
VGS = 20V
VDS = 15V, VGS = 0V
VDS = 15V, ID = 0.5nA
VGS = 0V, ID = 20mA
VGS = 0V, ID = 0
VDS = 10V, VGS = 0V
VDD = 10V, VGS(on) = 0V
ID = 20mA, VGS(off) = 10V
Min. Typ. Max. Units
40
V
1
nA
50
mA
4
10
V
750 mV
25
Ω
5
pF
6
nS
3
nS
25 nS
©2002 Fairchild Semiconductor Corporation
Rev. A1, November 2002
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