BSP60 Просмотр технического описания (PDF) - NXP Semiconductors.

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Компоненты Описание

производитель

BSP60

PNP Darlington transistors

NXP Semiconductors. 

NXP Semiconductors

PNP Darlington transistors

Product data sheet

BSP60; BSP61; BSP62

6000

handbook, full pagewidth

hFE

5000

4000

3000

2000

1000

0

−10−1

VCE = −10 V.

MGD839

−1

−10

−102

IC (mA)

−103

Fig.2 DC current gain; typical values.

handbook, full pagewidth

VBB

VCC

(probe)

oscilloscope

450 Ω

Vi

RB

R2

R1

RC

Vo

(probe)

oscilloscope

450 Ω

DUT

MGD624

Vi = −10 V; T = 200 μs; tp = 6 μs; tr = tf ≤ 3 ns.

R1 = 56 Ω; R2 = 10 kΩ; RB = 10 kΩ; RC = 18 Ω.

VBB = 1.8 V; VCC = −10.7 V.

Oscilloscope: input impedance Zi = 50 Ω.

Fig.3 Test circuit for switching times.

2001 May 31

4

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