BSP32 Просмотр технического описания (PDF) - STMicroelectronics
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BSP32 Datasheet PDF : 4 Pages
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BSP30/31/32/33
THERMAL DATA
Rthj-amb • Thermal Resistance Junction-Ambient
Rthj-tab • Thermal Resistance Junction-Collecor Tab
• Mounted on a ceramic substrate area = 30 x 35 x 0.7 mm
Max
Max
62.5
8
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICBO
Collector Cut-off
Current (IE = 0)
VCB = -60 V
VCB = -60 V Tj = 150 oC
V(BR)CBO Collector-Base
Breakdown Voltage
(IE = 0)
IC = -100 µA
for BSP30/BSP31
for BSP32/BSP33
V(BR)CEO∗ Collector-Emitter
Breakdown Voltage
(IB = 0)
IC = -10 mA
for BSP30/BSP31
for BSP32/BSP33
V(BR)CES Collector-Emitter
Breakdown Voltage
(VBE = 0)
IC = -10 µA
for BSP30/BSP31
for BSP32/BSP33
V(BR)EBO
VCE(sat)∗
Emitter-Base
Breakdown Voltage
(IC = 0)
Collector-Emitter
Saturation Voltage
IC = -10 µA
IC = -150 mA IB = -15 mA
IC = -500 mA IB = -50 mA
VBE(sat)∗ Base-Emitter
Saturation Voltage
IC = -150 mA IB = -15 mA
IC = -500 mA IB = -50 mA
hFE∗ DC Current Gain
for BSP30/BSP31
IC = -100 µA VCE = -5 V
IC = -100 mA VCE = -5 V
IC = -500 mA VCE = -5 V
for BSP32/BSP33
IC = -100 µA VCE = -5 V
IC = -100 mA VCE = -5 V
IC = -500 mA VCE = -5 V
fT
Transition Frequency IC = -50 mA VCE = -10 V f = 35 MHz
CCBO
Collector-Base
Capacitance
IE = 0
VCB = -10 V f = 1 MHz
CEBO
Emitter-Base
Capacitance
IC = 0
VEB = -0.5 V f = 1 MHz
ton
Turn-on Time
IC = -100 mA IB1 = -IB2 = -5 mA
toff
Turn-on Time
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1.5 %
Min.
-70
-90
-60
-80
-70
-90
-5
10
40
30
30
50
50
100
Typ.
Max.
-100
-50
-0.25
-0.5
-1
-1.2
120
300
20
120
500
650
Unit
nA
µA
V
V
V
V
V
V
V
V
V
V
V
MHz
pF
pF
ns
ns
2/4
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