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BS107 Просмотр технического описания (PDF) - Siemens AG

Номер в каталоге
Компоненты Описание
производитель
BS107 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
BS 107
Typ. output characteristics
ID = ƒ(VDS)
parameter: tp = 80 µs
0.30 Ptot = 1W
A
0.26
ID 0.24
0.22
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
0
2
k
jlihgf e
4
d
VGS [V]
a
2.0
b
2.5
c
3.0
d
3.5
e
4.0
f
4.5
c
g
5.0
h
6.0
i
7.0
j
8.0
k
9.0
b l 10.0
a
6
8 V 11
VDS
Typ. drain-source on-resistance
RDS (on) = ƒ(ID)
parameter: tp = 80 µs, Tj = 25 °C
80
a
b
c
RDS (on)
60
50
40
30
20
d
10 VGS [V] =
abcdef
2.0 2.5 3.0 3.5 4.0 4.5
0
l j hk f eig
ghi j kl
5.0 6.0 7.0 8.0 9.0 10.0
0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 A 0.18
ID
Typ. transfer characteristics ID = f(VGS)
parameter: tp = 80 µs
VDS2 x ID x RDS(on)max
0.40
A
ID
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0 1 2 3 4 5 6 7 8 V 10
VGS
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs,
VDS2 x ID x RDS(on)max
0.30
S
0.26
gfs 0.24
0.22
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
0.00 0.05 0.10 0.15 0.20
A
0.30
ID
Semiconductor Group
6
12/05/1997

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