BFQ67 Просмотр технического описания (PDF) - NXP Semiconductors.

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BFQ67

NPN 8 GHz wideband transistor

NXP Semiconductors. 

NXP Semiconductors

NPN 8 GHz wideband transistor

Product specification

BFQ67

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

Rth j-s

thermal resistance from junction to soldering point

note 1

Note

1. Ts is the temperature at the soldering point of the collector lead.

VALUE

260

UNIT

K/W

CHARACTERISTICS

Tj = 25 C unless otherwise specified.

SYMBOL

ICBO

hFE

Cc

Ce

Cre

fT

GUM

F

PARAMETER

collector cut-off current

DC current gain

collector capacitance

emitter capacitance

feedback capacitance

transition frequency

maximum unilateral power gain

(note 1)

noise figure

CONDITIONS

IE = 0; VCB = 5 V

IC = 15 mA; VCE = 5 V

IE = ie = 0; VCB = 8 V; f = 1 MHz

IC = ic = 0; VEB = 0.5 V; f = 1 MHz

IC = 0; VCB = 8 V; f = 1 MHz

IC = 15 mA; VCE = 8 V

IC = 15 mA; VCE = 8 V;

Tamb = 25 C; f = 1 GHz

IC = 15 mA; VCE = 8 V; f = 2 GHz

s = opt; IC = 5 mA; VCE = 8 V;

Tamb = 25 C; f = 1 GHz

s = opt; IC = 15 mA; VCE = 8 V;

Tamb = 25 C; f = 1 GHz

s = opt; IC = 5 mA; VCE = 8 V;

Tamb = 25 C; f = 2 GHz

IC = 5 mA; VCE = 8 V;

Tamb = 25 C; f = 2 GHz; Zs = 60 

s = opt; IC = 15 mA; VCE = 8 V;

Tamb = 25 C; f = 2 GHz

IC = 15 mA; VCE = 8 V;

Tamb = 25 C; f = 2 GHz; Zs = 60 

MIN. TYP. MAX. UNIT





50 nA

60 100 



0.7 

pF



1.3 

pF



0.5 

pF



8



GHz



14 

dB



8



dB



1.3 

dB



1.7 

dB



2.2 

dB



2.5 

dB



2.7 

dB



3



dB

Note

1. GUM is the maximum unilateral power gain, assuming S12 is zero and

GUM

=

10

log ------------------------S----2---1----2-----------------------dB

1 – S11 21 – S22 2

.

1998 Aug 27

3

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