BFP81 Просмотр технического описания (PDF) - Siemens AG

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производитель

BFP81

NPN Silicon RF Transistor

Siemens AG 

BFP 81

Electrical Characteristics at TA = 25°C, unless otherwise specified.

Parameter

Symbol

Values

min.

typ.

max.

AC Characteristics

Transition frequency

IC = 15 mA, VCE = 8 V, f = 500 MHz

Collector-base capacitance

VCB = 10 V, f = 1 MHz

Collector-emitter capacitance

VCE = 10 V, f = 1 MHz

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz

Noise figure

IC = 5 mA, VCE = 8 V, ZS = ZSopt

f = 900 MHz

f = 1.8 GHz

Power gain 2)

IC = 15 mA, VCE = 8 V, ZS = ZSopt

ZL = ZLopt

f = 900 MHz

f = 1.8 GHz

Transducer gain

IC = 15 mA, VCE = 8 V, ZS =ZL= 50 Ω

f = 900 MHz

f = 1.8 GHz

fT

4.5

Ccb

-

Cce

-

Ceb

-

F

-

-

Gma

-

-

|S21e|2

-

-

5.8

-

0.3

0.5

0.29 -

0.9

-

1.45 -

2.2

-

21

-

13.5 -

15.5 -

9.5

-

2) Gma = |S21/S12| (k-(k2-1)1/2)

Unit

GHz

pF

dB

Semiconductor Group

3

Dec-11-1996

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