BFM505,115 Просмотр технического описания (PDF) - NXP Semiconductors.
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BFM505,115 Datasheet PDF : 12 Pages
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NXP Semiconductors
Dual NPN wideband transistor
Product specification
BFM505
FEATURES
Small size
Temperature and hFE matched
Low noise and high gain
High gain at low current and low capacitance at low
voltage
Gold metallization ensures excellent reliability.
APPLICATIONS
Oscillator and buffer amplifiers
Balanced amplifiers
LNA/mixer.
DESCRIPTION
Dual transistor with two silicon NPN RF dies in a surface
mount, 6-pin SOT363 (S-mini) package. The transistors
are primarily intended for wideband applications in the
GHz-range in the RF front end of analog and digital cellular
phones, cordless phones, radar detectors, pagers and
satellite TV-tuners.
PINNING - SOT363A
PIN SYMBOL
DESCRIPTION
1
b1
base 1
2
e1
emitter 1
3
c2
collector 2
4
b2
base 2
5
e2
emitter 2
6
c1
collector 1
654
handbook, halfpage
c1
c2
b1
b2
123
Top view
Marking code: N0.
e1
e2
MAM210
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
Any single transistor
Cre
fT
s21 2
feedback capacitance
transition frequency
insertion power gain
GUM
maximum unilateral power gain
F
noise figure
Rth j-s
thermal resistance from junction
to soldering point
CONDITIONS
MIN. TYP. MAX. UNIT
Ie = 0; VCB = 3 V; f = 1 MHz
IC = 5 mA; VCE = 3V; f = 1 GHz
IC = 5 mA; VCE = 3 V; f = 900 MHz; 14
Tamb = 25 C
IC = 5 mA; VCE = 3 V; f = 900 MHz;
Tamb = 25 C
IC = 1 mA; VCE = 3 V; f = 900 MHz;
S = opt
single loaded
double loaded
0.22
9
15
pF
GHz
dB
17
dB
1.1 1.6 dB
230 K/W
115 K/W
1996 Oct 08
2
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