BF820 Просмотр технического описания (PDF) - Philips Electronics

Номер в каталоге

Компоненты Описание

производитель

BF820

NPN high-voltage transistors

Philips Electronics 

Philips Semiconductors

NPN high-voltage transistors

Product specification

BF820; BF822

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-a

thermal resistance from junction to ambient

Note

1. Transistor mounted on an FR4 printed-circuit board.

CONDITIONS

note 1

VALUE

500

UNIT

K/W

CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

ICBO

collector cut-off current

IEBO

hFE

VCEsat

Cre

fT

emitter cut-off current

DC current gain

collector-emitter saturation

voltage

feedback capacitance

transition frequency

CONDITIONS

IE = 0; VCB = 200 V

IE = 0; VCB = 200 V; Tj =150 °C

IC = 0; VEB = 5 V

IC = 25 mA; VCE = 20 V

IC = 30 mA; IB = 5 mA

MIN.

−

−

−

50

−

MAX.

10

10

50

−

600

UNIT

nA

µA

nA

mV

IC = ic = 0; VCB = 30 V; f = 1 MHz

−

IC = 10 mA; VCE = 10 V; f = 100 MHz 60

1.6

pF

−

MHz

1999 Apr 15

3

Share Link: