BF620 Просмотр технического описания (PDF) - Philips Electronics

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производитель

BF620

NPN high-voltage transistors

Philips Electronics 

Philips Semiconductors

NPN high-voltage transistors

Product specification

BF620; BF622

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

Rth j-s

thermal resistance from junction to ambient

note 1

thermal resistance from junction to soldering point

100

K/W

20

K/W

Note

1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2.

For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.

CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

MIN.

ICBO

IEBO

hFE

VCEsat

Cre

fT

collector cut-off current

emitter cut-off current

DC current gain

collector-emitter saturation voltage

feedback capacitance

transition frequency

IE = 0; VCB = 200 V

−

IE = 0; VCB = 200 V; Tj = 150 °C

−

IC = 0; VEB = 5 V

−

IC = 25 mA; VCE = 20 V

50

IC = 30 mA; IB = 5 mA

−

IC = ic = 0; VCE = 30 V; f = 1 MHz

−

IC = 10 mA; VCE = 10 V; f = 100 MHz 60

MAX.

10

10

50

−

600

1.6

−

UNIT

nA

µA

nA

mV

pF

MHz

1999 Apr 21

3

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