BF420 Просмотр технического описания (PDF) - Siemens AG

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BF420

NPN Silicon Transistors

Siemens AG 

NPN Silicon Transistors

With High Reverse Voltage

q High breakdown voltage

q Low collector-emitter saturation voltage

q Low capacitance

q Complementary types: BF 421, BF 423 (PNP)

BF 420

BF 422

2

3

1

Type

BF 420

BF 422

Marking

–

Ordering Code

Q62702-F531

Q62702-F495

Pin Configuration

1

2

3

E

C

B

Package1)

TO-92

Maximum Ratings

Parameter

Symbol Values

BF 420

Collector-emitter voltage

VCE0

–

Collector-emitter voltage

RBE = 2.7 k

VCER

300

Collector-base voltage

VCB0

300

Emitter-base voltage

VEB0

Collector current

IC

Peak base current

IBM

Total power dissipation, TC = 88 ˚C Ptot

Junction temperature

Tj

Storage temperature range

Tstg

BF 422

250

–

250

5

50

100

830

150

– 65 … + 150

Thermal Resistance

Junction - ambient

Junction - case2)

Rth JA

Rth JC

≤ 150

≤ 75

Unit

V

mA

mW

˚C

K/W

1) For detailed information see chapter Package Outlines.

2) Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.

Semiconductor Group

1

5.91

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