BDX33 Просмотр технического описания (PDF) - Unspecified
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BDX33 Datasheet PDF : 5 Pages
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BDX33, 34
Darlington Transistors
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Symbol
Minimum
Maximum
Unit
Collector-Emitter Sustaining Voltage (1)
(IC = 100mA, IB = 0) BDX33B, BDX34B
BDX33C, BDX34C
VCEO(sus)
80
-
V
100
Collector Cut off Current
(VCE = 40V, IB = 0)
BDX33B, BDX34B
(VCE = 50V, IB = 0)
BDX33C, BDX34C
ICEO
-
0.5
0.5
mA
Collector-Base Cut off Current
(VCB = Rated VCB, IE = 0)
ICBO
-
200
µA
Emitter-Base Cut off Current
(VEB = 5.0V, IC = 0)
ON CHARACTERISTICS (1 )
DC Current Gain
(IC = 3.0A, VCE = 3.0V) BDX33B/33C/34B/34C
Collector-Emitter Saturation Voltage
(IC = 3.0A, IB = 6.0mA) BDX33B/33C/34B/34C
Base-Emitter On Voltage
(IC = 3.0A, VCE = 3.0V) BDX33B/33C/34B/34C
IEBO
-
10
mA
hFE
750
-
-
VCE(sat)
-
2.5
V
VBE(on)
-
2.5
(1) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤2.0%
Figure - 2 Safe Operating Area
There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown
safe operating area curves indicate IC-VCE limits of the transistor
that must be observed for reliable operation i.e., the transistor
must not be subjected to greater dissipation than the curves
indicate.
The data of Figure - 2 is based on TJ(PK) = 150°C; TC is variable
depending on conditions. Second breakdown pulse limits are
valid for duty cycles to 10% provided TJ(PK) <150°C. At high case
temperatures, thermal limitation will reduce the power that can
be handled to values less than the limitations imposed by second
breakdown.
Page 3
31/05/05 V1.0
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