BD912 Просмотр технического описания (PDF) - Inchange Semiconductor
Номер в каталоге
Компоненты Описание
производитель
BD912 Datasheet PDF : 5 Pages
| |||
Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
BD910 BD912
DESCRIPTION
·
·With TO-220C package
·Complement to type BD909 BD911
APPLICATIONS
·Intented for use in power linear
and switching applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
BD910
BD912
CONDITIONS
Open emitter
VCEO
Collector-emitter voltage
BD910
BD912
Open base
VEBO
Emitter-base voltage
Open collector
IC
Collector current
IB
Base current
PC
Collector power dissipation
TC≤25℃
Tj
Junction temperature
Tstg
Storage temperature
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
-80
-100
-80
-100
-5
-15
-5
90
150
-65~150
UNIT
V
V
V
A
A
W
℃
℃
MAX
1.4
UNIT
℃/W
Share Link: 