BD810 Просмотр технического описания (PDF) - SavantIC Semiconductor

Номер в каталоге

Компоненты Описание

производитель

BD810

Silicon PNP Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon PNP Power Transistors

Product Specification

BD810

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-emitter sustaining voltage IC=-0.1A; IB=0

VCEsat Collector-emitter saturation voltage IC=-3 A;IB=-0.3 A

VBE

ICBO

IEBO

hFE-1

Base-emitter voltage

Collector cut-off current

Emitter cut-off current

DC current gain

IC=-4A ; VCE=-2V

VCB=-80V; IE=0

VEB=-5V; IC=0

IC=-2A ; VCE=-2V

hFE-2

DC current gain

IC=-4A ; VCE=-2V

fT

Transition frequency

IC=-1A ; VCE=-10V;f=1.0MHz

MIN TYP. MAX UNIT

-80

V

-1.1

V

-1.6

V

-1.0 mA

-2.0 mA

30

15

1.5

MHz

2

Share Link: