BD434 Просмотр технического описания (PDF) - Transys Electronics Limited

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Компоненты Описание

производитель

BD434

EPITAXIAL SILICON POWER TRANSISTORS

Transys Electronics Limited 

EPITAXIAL SILICON POWER TRANSISTORS

ECB

BD433

BD435

BD437

BD439

BD441

NPN

BD434

BD436

BD438

BD440

BD442

PNP

TO126

Plastic Package

ELECTRICAL CHARACTERISTICS (TC=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL TEST CONDITION BD433 BD435 BD437 BD439 BD441

DC Current Gain

BD434 BD436 BD438 BD440 BD442

*hFE

IC=10mA, VCE=5V

>40 >40 >30 >20 >15

IC=500mA, VCE=1V >85 >85 >85 >40 >40

IC=2.0A, VCE=1V

>50 >50 >40 >25 >15

*hFE1 / hFE2

Current Gain Bandwidth

Product

Matched IC=500mA, VCE=1V ALL

Pairs

fT

IC=250mA, VCE=1V ALL

<1.4

>3.0

*Pulsed Pulse Duration=300µs, Duty Cycle=1.5%

UNIT

MHz

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