BD380 Просмотр технического описания (PDF) - Inchange Semiconductor

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производитель

BD380

Silicon PNP Power Transistors

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistors

isc Product Specification

BD376/378/380

DESCRIPTION

·DC Current Gain-

: hFE= 20(Min)@ IC= -1A

·Complement to Type BD375/377/379

APPLICATIONS

·Designed for medium power linear and switching

applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

BD376

-50

VCBO

Collector-Base Voltage BD378

-75

V

BD380

-100

BD376

-45

VCEO

Collector-Emitter Voltage BD378

-60

V

BD380

-80

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-2

A

ICM

Collector Current-Peak

-3

A

IBB

Base Current-Continuous

PC

Collector Power Dissipation

@ TC=25℃

TJ

Junction Temperature

Tstg

Storage Temperature Range

-1

A

25

W

150

℃

-55~150

℃

isc Website：www.iscsemi.cn

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