BD330 Просмотр технического описания (PDF) - Inchange Semiconductor

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BD330

Silicon PNP Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistor

isc Product Specification

BD330

DESCRIPTION

·DC Current Gain-

: hFE= 85~375(Min)@ IC= -0.5A

·Collector-Emitter Sustaining Voltage -

: VCEO(SUS)= -20V(Min)

·Complement to type BD329

APPLICATIONS

·Especially for battery equipped applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-32

V

VCEO

Collector-Emitter Voltage

-20

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-3

A

IBM

Base Current-Peak

PC

Collector Power Dissipation

@ TC=25℃

TJ

Junction Temperature

Tstg

Storage Temperature Range

-1

A

15

W

150

℃

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

Rth j-c Thermal Resistance,Junction to Case

7 ℃/W

Rth j-a Thermal Resistance,Junction to Ambient 100 ℃/W

isc Website：www.iscsemi.cn

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