BD239 Просмотр технического описания (PDF) - Bourns, Inc

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BD239

NPN SILICON POWER TRANSISTORS

Bourns, Inc 

BD239, BD239A, BD239B, BD239C

NPN SILICON POWER TRANSISTORS

TYPICAL CHARACTERISTICS

1000

TYPICAL DC CURRENT GAIN

vs

COLLECTOR CURRENT

TCS631AG

VCE = 4 V

tp = 300 µs, duty cycle < 2%

TC = 25°C

TC = 80°C

COLLECTOR-EMITTER SATURATION VOLTAGE

vs

BASE CURRENT

TCS631AE

10

IC = 100 mA

IC = 300 mA

IC = 1 A

1·0

100

0·1

10

0·01

0·1

IC - Collector Current - A

Figure 1.

0·01

1·0

0·1

1·0

10

100

IB - Base Current - mA

Figure 2.

1000

BASE-EMITTER VOLTAGE

vs

COLLECTOR CURRENT

TCS631AF

1·0

VCE = 4 V

TC = 25°C

0·9

0·8

0·7

0·6

0·5

0·01

0·1

1·0

IC - Collector Current - A

Figure 3.

PRODUCT INFORMATION

JUNE 1973 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

3

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