BD235 Просмотр технического описания (PDF) - Transys Electronics Limited

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BD235

TO-126 Plastic-Encapsulated Transistors

Transys Electronics Limited 

Transys

Electronics

LIMITED

TO-126 Plastic-Encapsulated Transistors

BD233/235/237 TRANSISTOR (NPN)

FEATURES

TO-126

Power dissipation

1. EMITTER

PCM:

1.25 W (Tamb=25℃)

2. COLLECTOR

Collector current

ICM:

Collector-base voltage

2A

V(BR)CBO:

BD233 : 45 V

BD235: 60 V

BD237: 100 V

Operating and storage junction temperature range

TJ : 150℃

Tstg: -65℃ to +150℃

3. BASE

123

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol Test conditions

MIN

MAX

Collector-base breakdown voltage

BD233

45

BD235

V(BR)CBO

Ic= 100µA, IE=0

60

BD237

100

Collector-emitter breakdown voltage BD233

45

BD235

V(BR)CEO

Ic= 10mA, IB=0

60

BD237

80

Emitter-base breakdown voltage

V(BR)EBO

IE= 100µA, IC=0

5

Collector cut-off current

BD233

VCB= 45V, IE=0

BD235

ICBO

VCB= 60V, IE=0

100

BD237

VCB= 100V, IE=0

Emitter cut-off current

IEBO

VEB= 5V, IC=0

1

DC current gain

HFE(1)

VCE= 2V, IC=150mA

40

HFE(2)

VCE=2V, IC= 1A

25

Collector-emitter saturation voltage

Transition frequency

VCE(sat)

IC=1A, IB= 100m A

0.6

VCE=10V, Ic=250mA

fT

3

f =10MHz

UNIT

V

V

V

µA

mA

V

MHz

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