BCW60D(2007) Просмотр технического описания (PDF) - Infineon Technologies

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Компоненты Описание

производитель

BCW60D
(Rev.:2007)

NPN Silicon AF Transistors

Infineon Technologies 

AC Characteristics

Transition frequency

fT

IC = 20 mA, VCE = 5 V, f = 100 MHz

Collector-base capacitance

Ccb

VCB = 10 V, f = 1 MHz

Emitter-base capacitance

Ceb

VEB = 0.5 V, f = 1 MHz

Short-circuit input impedance

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. G

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. B/ H

h11e

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. C/ J /FF

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. D/ K

Open-circuit reverse voltage transf. ratio

h12e

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. G

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. B /H

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. C/ J/ FF

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. D/ K

Short-circuit forward current transf. ratio

h21e

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. G

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. B/ H

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. C/ J/ FF

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. D/ K

Open-circuit output admittance

h22e

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. G

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. B/ H

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. C/ J/ FF

IC = 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp. D/ K

Noise figure

F

IC = 200 µA, VCE = 5 V, f = 1 kHz,

D f = 200 Hz, RS = 2 kΩ, hFE-grp. B - K

IC = 200 µA, VCE = 5 V, f = 1 kHz,

∆ f = 200 Hz, RS = 2 kΩ, hFE-grp. FF

Equivalent noise voltage

Vn

IC = 200 µA, VCE = 5 V, RS = 2 kΩ,

f = 10...50 Hz , hFE-grp. FF

5

BCW60, BCX70

- 250 - MHz

- 0.95 - pF

-

9

-

kΩ

-

2.7

-

-

3.6

-

-

4.5

-

-

7.5

-

10-4

-

1.5

-

-

2

-

-

2

-

-

3

-

-

-

200

-

-

260

-

-

330

-

-

520

-

µS

-

18

-

-

24

-

-

30

-

-

50

-

dB

-

2

-

-

1

2

-

- 0.135 µV

2007-04-20

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