BCW60D(2007) Просмотр технического описания (PDF) - Infineon Technologies
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BCW60D Datasheet PDF : 11 Pages
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BCW60, BCX70
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0 , BCW60, ...60FF
IC = 10 mA, IB = 0 , BCX70
V(BR)CEO
32
-
45
-
V
-
-
Collector-base breakdown voltage
IC = 10 µA, IE = 0 , BCW60, ...60FF
IC = 10 µA, IE = 0 , BCX70
V(BR)CBO
32
-
-
45
-
-
Emitter-base breakdown voltage
IE = 1 µA, IC = 0
V(BR)EBO 6
-
-
Collector-base cutoff current
ICBO
VCB = 32 V, IE = 0 , BCW60, ...60FF
VCB = 45 V, IE = 0 , BCX70
VCB = 32 V, IE = 0 , TA = 150 °C, BCW60, ...60FF
VCB = 45 V, IE = 0 , TA = 150 °C, BCX70
µA
-
- 0.02
-
- 0.02
-
-
20
-
-
20
Emitter-base cutoff current
VEB = 4 V, IC = 0
IEBO
-
-
20 nA
DC current gain-
IC = 10 µA, VCE = 5 V, hFE-grp. G
IC = 10 µA, VCE = 5 V, hFE-grp. B/ H
IC = 10 µA, VCE = 5 V, hFE-grp. C/ J/ FF
IC = 10 µA, VCE = 5 V, hFE-grp. D/ K
IC = 2 mA, VCE = 5 V, hFE-grp. G
IC = 2 mA, VCE = 5 V, hFE-grp. B/ H
IC = 2 mA, VCE = 5 V, hFE-grp. C/ J/ FF
IC = 2 mA, VCE = 5 V, hFE-grp. D/ K
IC = 50 mA, VCE = 1 V, hFE-grp. G
IC = 50 mA, VCE = 1 V, hFE-grp. B/ H
IC = 50 mA, VCE = 1 V, hFE-grp. C/ J/ FF
IC = 50 mA, VCE = 1 V, hFE-grp. D/ K
hFE
-
20 140 -
20 200 -
40 300 -
100 460 -
120 170 220
180 250 310
250 350 460
380 500 630
50
-
-
70 -
-
90
-
-
100
-
-
3
2007-04-20
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