BCX70J Просмотр технического описания (PDF) - Diotec Semiconductor Germany
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BCX70J Datasheet PDF : 2 Pages
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General Purpose Transistors
Characteristics (Tj = 25/C)
Base saturation voltage – Basis-Sättigungsspannung 1)
IC = 10 mA, IB = 0.25 mA
VBEsat
IC = 50 mA, IB = 1.25 mA
VBEsat
DC current gain – Kollektor-Basis-Stromverhältnis 1)
BCX 70G hFE
VCE = 5 V, IC = 10 :A
BCX 70H hFE
BCX 70J hFE
BCX 70K hFE
BCX 70G hFE
VCE = 5 V, IC = 2 mA
BCX 70H hFE
BCX 70J hFE
BCX 70K hFE
BCX 70G hFE
VCE = 1 V, IC = 50 mA
BCX 70H hFE
BCX 70J hFE
BCX 70K hFE
Base-Emitter voltage – Basis-Emitter-Spannung 1)
VCE = 5 V, IC = 10 :A
VBEon
VCE = 5 V, IC = 2 mA
VBEon
VCE = 1 V, IC = 50 mA
VBEon
Gain-Bandwidth Product – Transitfrequenz
VCE = 5 V, IC = 10 mA, f = 100 MHz
fT
Collector-Base Capacitance – Kollektor-Basis-Kapazität
VCB = 10 V, IE = ie = 0, f = 1 MHz
CCB0
Emitter-Base Capacitance – Emitter-Basis-Kapazität
VEB = 0.5 V, IC = ic = 0, f = 1 MHz
CEB0
Noise figure – Rauschzahl
VCE = 5 V, IC = 200 :A, RG = 2 kS,
f = 1 kHz, )f = 200 Hz
F
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
BCX 70
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
600 mV
700 mV
–
850 mV
–
1050 mV
–
–
–
30
–
–
40
–
–
100
–
–
120
–
220
180
–
310
250
–
460
380
–
630
50
–
–
70
–
–
90
–
–
100
–
–
–
550 mV
–
520 mV
650 mV
780 mV
–
700 mV
–
100 MHz 250 MHz
–
–
1.7 pF
–
–
11 pF
–
–
2 dB
6 dB
RthA
420 K/W 2)
BCX 71 series
Marking
Stempelung
BCX 70G = AG BCX 70H = AH BCX 70J = AJ BCX 70K = AD
1) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
2) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
01.11.2003
57
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