BCW68GLT1 Просмотр технического описания (PDF) - Willas Electronic Corp.
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производитель
BCW68GLT1 Datasheet PDF : 3 Pages
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WILLAS FM120-M+
1.0GA SeUnRFeArCaE lMPOUuNrTpSCoHsOTeTKTYrBaAnRRsIEiRsRtoECrTsIFIERS
-20V-
BCW68GLT1 THRU
200V
FM1200-M
SOD-123+ PACKAGE
Pb Free Produ
Features
PNP Silicon • Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Ro•HLSowprpordouficlet fsourrpfaaccekinmgocuondteedsaupffpixli"cGat"i,on in order to
optimize board space.
•
Ha•loLgoewnpforeweepr rloodssu,cht ifgohr peaffcickiinegnccyo.de suffix "H" .
W•eiHghigth: c0u.0r0re8ngt capability, low forward voltage drop.
• High surge capability.
ORDE• RGIuNaGrdIrNinFgOfoRr MovAeTrvIOolNtage protection.
• UDlteravihceigh-speed sMwaitrckhiningg.
Shipping
• Silicon epitaxi
BCW68GLT1
al
pl
anar
DG
chip,
m
etal3s0i0li0c/oTnapjuen&cRtieoenl .
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
MAXIMHUalMogeRnAfrTeIeNpGroSduct for packing code suffix "H"
Mechanical data
• EpoRxaytin: gUL94-V0 rated flamSeymrebtoalrdant Value
Unit
Co•llCecatsoer–:EMmoittledreVdopltlaagsetic, SOD-V12CE3OH
– 45
Vdc
Co•llTeectromr–inBaalsse:VPolalttaegdeterminals,VsCoBlOderable pe–r M60IL-STD-7V5d0c,
Emitter–Base VoMlteagtheod 2026 V EBO
Co•llPecotloarrCituyr:reInntd—icaCteondtibnyuocuasthodIeCband
• Mounting Position : Any
– 5.0
– 800
Vdc
mAdc
THER• MWAeiLghCt H: AApRpAroCxTimEaRteISdT0I.C01S1 gram
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.031(0.8) Typ.
SOT–23
0.040(1.0)
0.024(0.6)
3
0.031(0.8) Typ.
COLLECTOR
1
Dimensions in iBnAcShEes and (millimeters)
2
EMITTER
CharacteriMstiAc XIMUM RATINGS AND ELECSTymRbIColAL CHAMRaAxCTERISUTniItCS
RSiantginlegTTsopAtha=aatl2s2D5e5e°℃hCviaclefawmDaibsviseeinp, ta6tt0eioHmnzpF,erRera–stiu5srtBievoeuanorldfe,isn(s1d)uocthtievrewliosaeds.pePciDfied.
For caDpearcaitteiveablooavde,2d5e°rCate current by 20%
225
mW
1.8
mW/°C
Thermal Resistance, Junction to Ambient
RθJA
556
°C/W
Total Device DissRipAaTtiIoNnGS
MarkinAg lCumodinea Substrate, (2) TA = 25°C
MaximuDmerRateecuarbreonvteP2e5a°kCReverse Voltage
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
PD 12
13300 14 mW 15
16
18
10
115 120
VRRM
20
302.4 40 mW/°C50
60
80
100
150
200
MaximuTmheRrmMaSl VRoelstaisgteance, Junction to Ambient
VRMS RθJA 14
21417 28 °C/W35
42
56
70
105
140
MaximuJmunDctCioBnlaonckdinSgtoVroalgtaegTeemperature
VDC TJ , Tstg20 –5530to +150 40 °C 50
60
80
100
150
200
MaExiLmEuCmTARveICraAgeLFCorHwAarRd AReCcTtifEieRd ICSuTrrIeCnSt (TA = 25°C IuOnless otherwise noted.)
1.0
Peak Forward Surge CCuhrraernat c8t.e3rmisstiscingle half sine-wave
superimposed on rated load (JEDEC method)
TypOicFaFl TCheHrmAaRl RAeCsiTstEanRcIeS(TNIoCteS2)
IFSM
RΘJA
TypicaCl Joullneccttionr–CEampiattceitraBnrceea(kNdootwe n1)Voltage (IC = –10 mCAdJ c, IB = 0 )
OperatCinoglleTcetmorp–eEramtuitrteerRBarnegaekdown Voltage (IC = –10 µATdJc, VEB = 0 )
Storage Temperature Range
TSTG
Emitter–Base Breakdown Voltage (I E= –10 µAdc, I C = 0)
Symbol
V (BR)CEO
-55 to +125
V (BR)CES
V (BR)EBO
Min
– 45
– 60
– 5.0
Typ M3a0x Unit
40
— 1—20 Vdc
—
—
Vdc -55 to +150
- 65 to +175
— — Vdc
Collector CutCofHf CARurAreCnTtERISTICS
SYMBOL FM120-MH FM130I-MCEHS FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Maxim(uVmCEF=or–w4a5rdVVdocl,taIgEe=a0t )1.0A DC
VF
Maxim(uVmCEA=ve–r4a5geVRdce,veI rBs=e0C,uTrrAen=t1a5t 0°@CT) A=25℃
IR
Rated DC Blocking Voltage
@T A=125℃
Emitter Cutoff Current (VEB = – 4.0 Vdc, I C = 0)
0.50
—
0—.70 – 20 nAd0c.85
—
— –0.150 µAdc
10
I EBO
—
— – 20 nAdc
0.9
0.92
NO1T.EFSR: – 5 = 1.0 x 0.75 x 0.062 in.
1- M2e. aAsluurmedinaat 1= M0.H4Zxa0n.d3axpp0l.i0ed24reivne.r9se9.v5o%ltagaeluomf i4n.0a.VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
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