BCW60 Просмотр технического описания (PDF) - Philips Electronics
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BCW60 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN general purpose transistors
Product specification
BCW60 series
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
500
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
IEBO
hFE
VCEsat
VBEsat
VBE
Cc
Ce
fT
F
PARAMETER
CONDITIONS
MIN.
collector cut-off current
emitter cut-off current
DC current gain
BCW60B
IE = 0; VCB = 32 V
−
IE = 0; VCB = 32 V; Tamb = 150 °C −
IC = 0; VEB = 4 V
−
IC = 10 µA; VCE = 5 V
20
BCW60C
40
BCW60D
100
DC current gain
BCW60B
IC = 2 mA; VCE = 5 V
180
BCW60C
250
BCW60D
380
DC current gain
BCW60B
IC = 50 mA; VCE = 1 V
70
BCW60C
90
BCW60D
100
collector-emitter saturation
IC = 10 mA; IB = 0.25 mA
50
voltage
IC = 50 mA; IB = 1.25 mA
100
base-emitter saturation voltage IC = 10 mA; IB = 0.25 mA
600
IC = 50 mA; IB = 1.25 mA
0.7
base-emitter voltage
IC = 10 µA; VCE = 5 V
−
IC = 2 mA; VCE = 5 V
550
IC = 50 mA; VCE = 1 V
−
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz −
emitter capacitance
IC = ic = 0; VEB = 0.5 V; f = 1 MHz −
transition frequency
IC = 10 mA; VCE = 5 V;
100
f = 100 MHz; note 1
noise figure
IC = 200 µA; VCE = 5 V;
−
RS = 2 kΩ; f = 1 kHz; B = 200 Hz
TYP.
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
520
650
780
1.7
11
250
2
MAX.
20
20
20
−
−
−
310
460
630
−
−
−
350
550
850
1.05
−
750
−
−
−
−
6
UNIT
nA
µA
nA
mV
mV
mV
V
mV
mV
mV
pF
pF
MHz
dB
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
1999 Apr 22
3
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