BCW60C Просмотр технического описания (PDF) - Galaxy Semi-Conductor
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BCW60C Datasheet PDF : 4 Pages
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BL Galaxy Electrical
Production specification
NPN General Purpose Amplifier
BCW60
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN MAX UNIT
Collector-base breakdown voltage V(BR)CBO
Collector-emitter breakdown
voltage
Emitter-base breakdown voltage
V(BR)CEO
V(BR)EBO
Collector cut-off current
ICBO
Emitter cut-off current
IEBO
DC current gain
BCW60B
BCW60C hFE
BCW60D
Collector-emitter saturation voltage VCE(sat)
Base-emitter saturation voltage
Transition frequency
VBE(sat)
fT
IC=10μA IE=0
32
V
IC=10mA IB=B 0
32
V
IE=1μA IC=0
5
VCB=32V IE=0
20
VEB=4V IC=0
VCE=5V IC=2mA
20
180 310
250 460
380 630
IC=10mA IB=B 0.25mA
IC=50mA IB=B 1.25mA
IC=10mA IB=B 0.25mA
IC=50mA IB=B 1.25mA
VCE=5V
f=100MHz
IC=10mA 100
0.35
0.55
0.85
1.05
250
V
nA
nA
V
V
MHz
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTC104
Rev.A
www.galaxycn.com
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