BC857S Просмотр технического описания (PDF) - Shenzhen Jin Yu Semiconductor Co., Ltd.

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производитель

BC857S

Multi-Chip TRANSISTOR (PNP)

Shenzhen Jin Yu Semiconductor Co., Ltd.  

Multi-Chip TRANSISTOR (PNP)

BC857S

FEATURES

Power dissipation

PCM : 300 mW(Tamb=25℃)

Collector current

ICM : -200 mA

Collector-base voltage

V(BR)CBO : -50

V

Operating and storage junction temperature range

TJ,Tstg: -55℃to +150℃

MARKING: 3C

ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter voltage

Transition frequency

Collector output capacitance

Noise figure

Symbol Test conditions

V(BR)CBO Ic=-10µA,IE=0

V(BR)CEO Ic=-10mA,IB=0

V(BR)EBO IE=-10µA,IC=0

ICBO

VCB=-30V,IE=0

hFE

VCE=-5V,IC=-2mA

VCE(sat)(1) IC=-10mA,IB=-0.5mA

VCE(sat)(2) IC=-100mA,IB=-5mA

VBE(1) VCE=-5V,IC=-2mA

VBE(2) VCE=-5V,IC=-10mA

fT

VCE=-5V,IC=-10mA,f=100MHz

Cob

VCB=-10V,IE=0,f=1MHz

VCE=-5V,Ic=-0.2mA,

NF

f=1kHZ,Rs=2KΩ,BW=200Hz

SOT-363

C1

B2

E2

E1

B1

C2

MIN TYP MAX UNIT

-50

V

-45

V

-5

V

-15

nA

125

630

-0.3

V

-0.65 V

-0.6

-0.75 V

-0.82 V

200

MHz

3.5

pF

2.5

dB

1

JinYu

semiconductor

www.htsemi.com

Date:2011/ 05

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