BC858W Просмотр технического описания (PDF) - Galaxy Semi-Conductor

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производитель

BC858W

PNP Silicon Epitaxial Planar Transistor

Galaxy Semi-Conductor 

BL Galaxy Electrical

Production specification

PNP Silicon Epitaxial Planar Transistor

BC856W/BC857W/BC858W

Parameter

Collector-base breakdown

voltage

Collector-emitter breakdown

voltage

Emitter-base breakdown

voltage

Collector cut-off current

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation

voltage

Base-emitter saturation

voltage

Transition frequency

Collector capacitance

Symbol

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

ICEO

IEBO

hFE

VCE(sat)

VBE(sat)

fT

CC

Test conditions

IC=-10μA,IE=0

IC=-10mA,IB=0

BC856W

BC857W

BC858W

BC856W

BC857W

BC858W

IE=-1μA,IC=0

BC856W

BC857W

BC858W

BC856W

BC857W

BC858W

VCB=-70V,IE=0

VCB=-45V,IE=0

VCB=-25V,IE=0

VCE=-60V,IB=0

VCE=-40V,IB=0

VCE=-25V,IB=0

VEB=-5V,IC=0

MIN MAX UNIT

-80

-50

V

-30

-65

-45

V

-30

-5

V

-0.1 μA

-0.1 μA

-0.1 μA

VCE=-5V,IC=-2mA

BC856AW,BC857AW

BC856BW,BC857BW,BC858BW

BC857CW,BC858CW

125 250

220 475

420 800

IC=-100mA, IB= -5mA

-0.5 mV

IC=-100mA, IB= -5mA

VCE=-5V,IC=-10mA,f=100MHz

VCB=-10V,f=1MHz

-1.1 V

100

4.5

MHz

pF

Document number: BL/SSSTF046

Rev.A

www.galaxycn.com

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