BC856-A-AE3-R Просмотр технического описания (PDF) - Unisonic Technologies

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Компоненты Описание

производитель

BC856-A-AE3-R

PNP SILICON TRANSISTOR

Unisonic Technologies 

BC856/BC857/BC858

„ TYPICAL CHARACTERISTICS

Static Characteristic

-50

-45

IB=-400uA

-40

IB=-350uA

-35

IB=-300uA

-30

IB=-250uA

-25

IB=-200uA

-20

IB=-150uA

-15

-10

IB=-100uA

-5

IB=-50uA

-0

-0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20

Collector-Emitter Voltage , VCE(V)

Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

-10

VBE(SAT)

-1

IC=10 IB

-0.1

VCE(SAT)

-0.01

-0.1

-1

-10

Collector Current , IC(mA)

Collector Output Capacitance

-100

10 f=1MHz IE=0

PNP SILICON TRANSISTOR

1000

DC Current Gain

VCE=-5V

100

10

-0.1

-100

-1

-10

Collector Current , IC(mA)

-100

Base-Emitter on Voltage

VCE=-5V

-10

-1

-0.1

1000

-0.2 -0.4 -0.6 -0.8 -1.0 -1.2

Base-Emitter Voltage, VBE(V)

Current Gain Bandwidth Product

f=1MHz IE=0

100

1

-1

-10

-100

Collector-Base Voltage, VCB(V)

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

10

-1

-10

Collector Current, IC (mA)

3 of 4

QW-R206-028,E

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