BC856A Просмотр технического описания (PDF) - TSC Corporation

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BC856A

200mW, PNP Small Signal Transistor

TSC Corporation 

Small Signal Product

RATINGS AND CHARACTERISTIC CURVES

Fig. 1 Static Characteristic

50

45

IB = -400μA

40

IB = -350μA

35

IB = -300μA

30

IB = -250μA

25

IB =- 200μA

20

IB = -150μA

15

10

IB = -100μA

5

IB = -50μA

0

0 2 4 6 8 10 12 14 16 18 20

VCE[V], Collector-Emitter Voltage

1000

100

Fig. 2 DC Current Gain

VCE = - 5V

10

-0.1

-1.0

-10.0

IC[mA], Collector Current

-100.0

Fig.3 Base-Emitter Saturation Voltage

VS.Collector-Emitter Saturation

10

IC = 10 IB

1

VBE(sat)

-100.

-10.

Fig. 4 Base-Emitter On Voltage

VCE = - 5V

VCE(sat)

0.1

-1.

0.01

0.1

1

10

100

IC[mA], Collector Current

Fig.5 Collector Output Capacitance

100

f=1MHz IE=0

10

1

-1.

-10.

-100.

VCB[V], Collector-Base Voltage

-1000.

-0.

-0.0

-0.2

-0.4

-0.6

-0.8

-1.0

-1.2

VBE[V], Base-Emitter Voltage

1000

Fig. 6 Current Gain Bandwidth Product

f=1MHz IE=0

100

10

1

-0.

-1.

-10.

IC[mA], Collector Current

-100.

Version : F14

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