BC846AF Просмотр технического описания (PDF) - Philips Electronics
Номер в каталоге
Компоненты Описание
производитель
BC846AF Datasheet PDF : 8 Pages
| |||
Philips Semiconductors
NPN general purpose transistors
Preliminary specification
BC846F; BC847F; BC848F series
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
in free air; note 1
VALUE
500
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
IEBO
hFE
VCEsat
emitter cut-off current
DC current gain
BC846AF; BC847AF; BC848AF
BC846BF; BC847BF; BC848BF
BC847CF; BC848CF
collector-emitter saturation voltage
VBE
base-emitter voltage
Cc
collector capacitance
fT
transition frequency
F
noise figure
CONDITIONS
IE = 0; VCB = 30 V
IE = 0; VCB = 30 V; Tj = 150 °C
IC = 0; VEB = 5 V
IC = 2 mA; VCE = 5 V
IC = 10 mA; IB = 0.5 mA
IC = 100 mA; IB = 5 mA; note 1
IC = 2 mA; VCE = 5 V
IC = 10 mA; VCE = 5 V
IE = ie = 0; VCB = 10 V; f = 1 MHz
IC = 10 mA; VCE = 5 V; f = 100 MHz
IC = 200 µA; VCE = 5 V; RS = 2 kΩ;
f = 1 kHz; B = 200 Hz
MIN.
−
−
−
110
200
420
−
−
580
−
−
100
−
MAX.
15
5
100
UNIT
nA
µA
nA
220
450
800
200
mV
400
mV
700
mV
770
mV
1.5
pF
−
MHz
10
dB
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
1999 May 18
4
Share Link: 