BC846BDW1T1 Просмотр технического описания (PDF) - E-Tech Electronics LTD

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BC846BDW1T1

NPN Duals Dual General Purpose Transistors

E-Tech Electronics LTD 

BC846BDW1T1, BC847BDW1T1, BC847CDW1T1, BC848BDW1T1, BC848CDW1T1

1.0

D=0.5

0.2

0.1

0.1

0.05

0.02

0.01

0.01

0.001

0

SINGLE PULSE

1.0

P (pk)

t1

t2

DUTY CYCLE, D = t 1 /t 2

Z θJA (t) = r(t) R θJA

R θJA = 328°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t

1

T J(pk) – T C = P (pk) R θJC (t)

10

100

1.0K

10K

t, TIME (ms)

Figure 11. Thermal Response

100K

1.0M

-200

-100

-50

-10

-5.0

-2.0

-1.0

-5.0

-10

-30 -45 -65 -100

V CE , COLLECTOR–EMITTER VOLTAGE (V)

Figure 12. Active Region Safe Operating Area

The safe operating area curves indicate I C –V CE limits of

thetransistor that must be observed for reliable operation.

Collector load lines for specific circuits must fall below the

limits indicated by the applicable curve.

The data of Figure 12 is based upon T J(pk) = 150°C; T C or

T A is variable depending upon conditions. Pulse curves are

valid for duty cycles to 10% provided T J(pk) < 150°C. T J

(pk) may be calculated from the data in Figure 12. At high

case or ambient temperatures, thermal limitations will reduce

the power that can be handled to values less than the limita-

tions imposed by the secondary breakdown.

BC846b–5/5

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