BC817W Просмотр технического описания (PDF) - TY Semiconductor
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производитель
BC817W Datasheet PDF : 2 Pages
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SMD Type
TransistIoCrs
Product specification
BC817W
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
BC817W
DC current gain
BC817-16W
BC817-25W
BC817-40W
Collector-emitter saturation voltage
Base-emitter voltage
Collector capacitance
Transition frequency
* Pulse test: t 300ìs, D 2%.
Symbol
ICBO
ICBO
IEBO
Testconditons
IE = 0 A; VCB = 20 V
IE = 0 A; VCB = 20 V;Tj = 150
IC = 0 A; VEB = 5 V
hFE IC = 100 mA; VCE = 1 V *
VCE(sat)
VBE
CC
fT
IC = 500 mA; IB = 50 mA
IC = 500 mA; VCE = 1 V
IE = ie = 0 A; VCB = 10 V;f = 1 MHz
IC = 10 mA; VCE = 5 V;f = 100 MHz
Min Typ Max Unit
100 nA
5 ìA
100 nA
100
600
100
250
160
400
250
600
700 mV
1.2 V
3
pF
100
MHz
hFE Classification
TYPE
Marking
BC817W
6D
BC817-16W BC817-25W
6A
6B
BC817-40W
6C
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sales@twtysemi.com
4008-318-123
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